Strain-Tunable Electronic Properties and Band Alignments in GaTe/C2N Heterostructure: a First-Principles Calculation
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چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2018
ISSN: 1931-7573,1556-276X
DOI: 10.1186/s11671-018-2708-x